News Article
Aixtron`s GaN-on-Si tool wins Aurora 2013 award
After being awarded at the CS awards for this tool the firm has been once again been recognised for its cost efficient MOCVD AIX G5+ reactor used for gallium nitride-on-silicon development
Aixtron SE was awarded the 2013 LEDinside Aurora Award in the category “Most efficient MOCVD Equipment” on June 11th, 2013.
Aixtron received the award for its AIX G5+ technology for Gallium-Nitride-on-Silicon (GaN-on-Si).
Aixtron’s system was chosen due to its production efficiency and technological advancement and was already awarded with the CS Industry Award in March of this year.
Aix-834-5x8" reactor
“Producing gallium nitride based LEDs on 200 mm silicon substrates is a promising route towards a much lower chip manufacturing cost,” comments Andreas Tönnis, Chief Technology Officer at Aixtron. “This second award within a short period of time again confirms the high degree of innovation of Aixtron’s R&D work in close cooperation with our customers.”
With the AIX G5+, Aixtron has created a novel 5 x 200 mm technology package for the existing AIX G5 HT for production of GaN-on-Si devices, offering the industry’s largest multi 200 mm MOCVD reactor. Manufacturers such as the US company Transphorm will build on Aixtron’s advanced GaN-on-Si expertise, expanding productivity from 150 to 200 mm diameter wafers, with the goal of fully exploiting economies of scale from the AIX G5+.
The well-known challenges of GaN-on-Si MOCVD processes are met by the novel features of the G5+ reactor, including modified temperature management, a new gas inlet and a chamber reset procedure. This results in minimization of wafer bow and elimination of so-called melt back effects, maximum process stability and highest uniformity due to a specifically designed rotational symmetry pattern.
Aixtron received the award for its AIX G5+ technology for Gallium-Nitride-on-Silicon (GaN-on-Si).
Aixtron’s system was chosen due to its production efficiency and technological advancement and was already awarded with the CS Industry Award in March of this year.
Aix-834-5x8" reactor
“Producing gallium nitride based LEDs on 200 mm silicon substrates is a promising route towards a much lower chip manufacturing cost,” comments Andreas Tönnis, Chief Technology Officer at Aixtron. “This second award within a short period of time again confirms the high degree of innovation of Aixtron’s R&D work in close cooperation with our customers.”
With the AIX G5+, Aixtron has created a novel 5 x 200 mm technology package for the existing AIX G5 HT for production of GaN-on-Si devices, offering the industry’s largest multi 200 mm MOCVD reactor. Manufacturers such as the US company Transphorm will build on Aixtron’s advanced GaN-on-Si expertise, expanding productivity from 150 to 200 mm diameter wafers, with the goal of fully exploiting economies of scale from the AIX G5+.
The well-known challenges of GaN-on-Si MOCVD processes are met by the novel features of the G5+ reactor, including modified temperature management, a new gas inlet and a chamber reset procedure. This results in minimization of wafer bow and elimination of so-called melt back effects, maximum process stability and highest uniformity due to a specifically designed rotational symmetry pattern.
